A process for manufacturing a semiconductor device with a multilayer wsi - film having a structure with a small particle size and a semiconductor device with a polysilicon layer formed thereon with a multilayer wsi - film

摘要

A process for manufacturing a semiconductor device, on the surface of a multi-layer tungsten silicide (wsi_X)-Film is formed, wherein said method comprising the steps of:(a) providing a semiconductor substrate with a surface;(b) forming a first layer (2) made of tungsten silicide on the surface;(c) forming a second layer (3) is made of a material which is made of tungsten or silicon is selected, on the first layer;(d) forming a third layer (1) made of tungsten silicide, which is thicker than the first layer (2) and a lower x - ratio than the first (2) layer, on the second layer (3): and(e) from the heat treatment of the steps (a) – (d) resulting multilayer film, in order to obtain a wsi_X-Film (11) to form with a plurality of layers.