METHOD FOR FORMING A POLYSILICON RESISTOR IN A REPLACEMENT METAL GATE PROCESS AND A SEMICONDUCTOR DEVICE INCLUDING THE POLYSILICON RESISTOR CAPABLE OF REPLACING A POLYSILICON GATE WITH A METAL GATE

摘要

PURPOSE: A method for forming a polysilicon resistor in a replacement metal gate process and a semiconductor device including the same are provided to prevent a resistance structure from being removed in removing a polysilicon layer by forming a photoresist on a substrate including the resistance structure before the polysilicon is removed.;CONSTITUTION: A substrate(100) includes an STI(Shallow Trench Isolation) region(110). A first SG FET(120), a second SG FET(130), and a resistance structure(140) are formed on the substrate. A polysilicon layer(152) is formed on a gate oxide layer(150). A sidewall spacer(154,156) is formed on both sides of the polysilicon layer. A photoresist(172) is formed on the substrate region including the resistance structure.;COPYRIGHT KIPO 2013