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Self-aligned polysilicon gate metal-oxide-semiconductor field effect transistor for large area electronics

机译：适用于大面积电子设备的自对准多晶硅栅极金属氧化物半导体场效应晶体管

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作者
Zhao, MingYuan;
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作者单位

Simon Fraser University (Canada);

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授予单位 Simon Fraser University (Canada);
学科
学位 M.A.Sc.
年度 2005
页码 90 p.
总页数 90
原文格式 PDF
正文语种 eng
中图分类
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专利

1. Low damage fully self-aligned replacement gate process for fabricating deep sub-100 nm gate length GaAs metal-oxide-semiconductor field-effect transistors [J] . X. Li, S. Bentley, H. McLelland, Journal of Vacuum Science & Technology . 2010,第6期

机译：低损伤的完全自对准替代栅极工艺，用于制造100nm以下深栅极长度的GaAs金属氧化物半导体场效应晶体管
2. Inversion-Mode Self-Aligned $hbox{In}_{0.53}hbox{Ga}_{0.47}hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate [J] . Lin J. Q., Lee S. J., Oh H. J., IEEE Electron Device Letters . 2008,第9期

机译：反转模式自对准$ hbox {In} _ {0.53} hbox {Ga} _ {0.47} hbox {As} $带有HfAlO栅极电介质和TaN金属栅极的N沟道金属氧化物半导体场效应晶体管
3. Nitrided thermal SiO_2 for use as top and bottom gate insulators in self-aligned double gate silicon-on-insulator metal-oxide-semiconductor field effect transistor [J] . Shibly S.Ahmed, John P.Denton, Gerold W.Neudeck Journal of Vacuum Science & Technology. B . 2001,第3期

机译：氮化热SiO_2，用作自对准双栅绝缘体上硅金属氧化物半导体场效应晶体管的顶部和底部栅极绝缘体
4. Hot Carrier Effects in Self-aligned and Offset-Gated Polysilicon Thin-Film Transistors [C] . N. Arpatzanis, A. T. Hatzopoulos, D. H. Tassis, Symposium on Materials and Devices for Smart Systems . 2006

机译：自对准和偏移门控多晶硅薄膜晶体管的热载体效应
5. A STUDY OF SELF-ALIGNED RECESSED GATE INDIUM-PHOSPHIDE AND INDIUM-GALLIUM - ARSENIDE FIELD-EFFECT TRANSISTORS (FET, OPTOELECTRONICS). [D] . CHENG, CHU-LIANG. 1984

机译：自对准后栅极磷化铟和砷化铟镓砷场效应晶体管（FET，光电）的研究。
6. Performance enhancement of multiple-gate ZnO metal-oxide-semiconductor field-effect transistors fabricated using self-aligned and laser interference photolithography techniques [O] . Hsin-Ying Lee, Hung-Lin Huang, Chun-Yen Tseng 2014

机译：使用自对准和激光干涉光刻技术制造的多栅极ZnO金属氧化物半导体场效应晶体管的性能增强
7. Self-aligned polysilicon gate metal-oxide-semiconductor field effect transistor for large area electronics [O] . Zhao Ming Yuan 2005

机译：适用于大面积电子产品的自对准多晶硅栅极金属氧化物半导体场效应晶体管
8. Self-Aligned, Extremely High Frequency III-V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates. [R] . Wang, C., Chien, J., Fang, H., 2012

机译：在刚性和柔性基板上的自对准，极高频III-V金属氧化物半导体场效应晶体管。

Self-aligned polysilicon gate metal-oxide-semiconductor field effect transistor for large area electronics

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