A method for using atomic layer epitaxy (ALE)and/or migration enhanced epitaxy (MEE) to grow highefficiency quantum wells in II-VI laser diodes. Thesubstrate and previously grown layers of the laser diodeare heated to a temperature less than or equal to about200[err]C in an MBE chamber. Sources of Cd, Zn, and Se areinjected alternately into the chamber to grow a short-period strained-layer superlattice (SPSLS) quantum welllayer including overlaying monolayers of Cd, Zn and Se.The quantum well layer is described by the notation((CdSe)[err](ZnSe)[err]], where m, n and p are integers.
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