Semiconductor device having multilevel interconnection structure and manufacturing method thereof

摘要

In a semiconductor device with a multilevel interconnection structure according to the present invention, a dielectric constant between interconnections is lowered and the reliability and performance of the device is enhanced. The semiconductor comprises a plurality of interconnections formed on a first insulating-film, a second insulating-film formed on the side walls of each of the plurality of interconnections, a plurality of grooves formed in the first insulating-film between the plurality of interconnections, and a third insulating-film, with smaller dielectric constant than that of the first and second insulating-film, formed in each of the plurality of grooves which each is between the plurality of interconnections, and directly formed on the first insulating-film.