Electronic beam exposure device and resist application development device and resist pattern formation manner

摘要

PROBLEM TO BE SOLVED: To minimize the time from application of resist to exposure, to make it even for every wafer and to keep the size of resist pattern constant. ;SOLUTION: An electron beam exposure system 1 is provided with an input device 11 which selects pattern data and various parameters from a pattern data file 14 and processes the data with a treatment time calculating means 12 which makes calculation with these data and parameters. The treatment time calculating means 12 is connected to a treatment time transferring means 13 so that the treatment time found by the treatment time calculating means 12 may be transmitted to a resist applying and developing device 2 in addition to wafer exchange. The resist applying and developing device 2 is provided with a data receiving means 21 and enables data transcription to a treatment time storing file 22.;COPYRIGHT: (C)1998,JPO