Application of E-beam chemically amplified resist to devices below 0.18 μm node

摘要

We have experimentally studied a possibility of chemically amplified (CA) resist process for mask production in various aspects. The pattern fidelity of CA resist for small patterns such as serifs and scattering bars was compared to that of ZEP7000, the most frequently used e-beam resist We elucidated the degree of delay effect in vacuum during a long e-beam writing time. It proved that critical-dimension (CD) change occurred with an acetal type resist compared to an acry late type resist. We have achieved CD uniformity of < l0nm in 3σ within 135X135 mm~2 field showing a high possibility for CAR process to be applied to the mask production for device generations beyond 180nm.