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Parylene Based Memristive Devices with Multilevel Resistive Switching for Neuromorphic Applications

机译:用于神经形态应用的具有多级电阻开关的基于聚对二甲苯的忆阻器件

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摘要

In this paper, the resistive switching and neuromorphic behaviour of memristive devices based on parylene, a polymer both low-cost and safe for the human body, is comprehensively studied. The Metal/Parylene/ITO sandwich structures were prepared by means of the standard gas phase surface polymerization method with different top active metal electrodes (Ag, Al, Cu or Ti of ~500 nm thickness). These organic memristive devices exhibit excellent performance: low switching voltage (down to 1 V), large OFF/ON resistance ratio (up to 104), retention (≥104 s) and high multilevel resistance switching (at least 16 stable resistive states in the case of Cu electrodes). We have experimentally shown that parylene-based memristive elements can be trained by a biologically inspired spike-timing-dependent plasticity (STDP) mechanism. The obtained results have been used to implement a simple neuromorphic network model of classical conditioning. The described advantages allow considering parylene-based organic memristors as prospective devices for hardware realization of spiking artificial neuron networks capable of supervised and unsupervised learning and suitable for biomedical applications.
机译:本文对基于聚对二甲苯的忆阻器件的电阻转换和神经形态行为进行了全面研究,聚对二甲苯是一种廉价且对人体安全的聚合物。通过标准气相表面聚合法,使用不同的顶部活性金属电极(厚度约为500〜nm的Ag,Al,Cu或Ti)制备了金属/聚对二甲苯/ ITO夹层结构。这些有机忆阻器件具有出色的性能:低开关电压(低至1 V),大的开/关电阻比(高达10 4 ),保持力(≥10 4 ) s)和高水平的多级电阻切换(对于Cu电极,至少16种稳定的电阻状态)。我们已经通过实验表明,基于聚对二甲苯的忆阻元素可以通过生物学启发的依赖于尖峰时间的可塑性(STDP)机制进行训练。获得的结果已用于实现经典条件的简单神经形态网络模型。所描述的优点允许将基于聚对二甲苯的有机忆阻器视为用于能够实现有监督和无监督学习并适用于生物医学应用的人工神经元网络的硬件实现的预期设备。

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