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The application and development device, resist pattern formation manner, forming the solution layer in the exposure

机译:涂布显影装置,抗蚀剂图案形成方式,在曝光时形成溶液层

摘要

A coating/developing apparatus by which particles adhered on a semiconductor wafer are removed by a simple structure after resist coating and prior to immersion exposure or after immersion exposure and prior to development. Prior to the immersion exposure, the wafer is cleaned by using a nozzle part provided with slit-shaped parallel suction ports on the both sides of a cleaning liquid discharge port having a length equivalent to substantially the diameter of the wafer. The nozzle part is provided with a U-shaped part, which surrounds the circumference of the wafer, has cleaning liquid discharge ports on the inner sides of an upper plane part and a lower plane part on the both edge parts of the nozzle part, a suction port surrounding the liquid discharge port on the lower plane part, and a suction port on a side plane part. The wafer is cleaned after the immersion exposure and prior to the development by using the nozzle part. Since the cleaning liquid is sucked while being discharged onto the surface or the circumference part of the wafer, a cup around the wafer for recovering the cleaning solution is eliminated. As a result, a space required for the entire coating/developing apparatus can be saved.
机译:涂覆/显影设备,通过该结构,在抗蚀剂涂覆之后,在浸没曝光之前或在浸没曝光之后以及在显影之前,通过简单的结构去除附着在半导体晶片上的颗粒。在浸没曝光之前,通过使用在清洁液排出口的两侧上具有狭缝形的平行抽吸口的喷嘴部分清洁晶片,该清洁液排出口的长度基本上等于晶片的直径。喷嘴部分设置有U形部分,该U形部分围绕晶片的圆周,并且在喷嘴部分的上平面部分的内侧和下平面部分的内侧具有清洁液排出口,在下平面部上包围排液口的吸气口,在侧平面部上的吸气口。在浸没曝光之后和显影之前,通过使用喷嘴部件清洁晶片。由于清洗液在被排出到晶片的表面或周边部分的同时被抽吸,因此消除了晶片周围用于回收清洗液的杯子。结果,可以节省整个涂布/显影设备所需的空间。

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