Fullerene-Containing Electrically Conducting Electron Beam Resist for Ultrahigh Integration of Nanometer Lateral-Scale Organic Electronic Devices

摘要

An outstanding issue with organic devices is the difficulty of simultaneously controlling the lateral size and position of structures at submicron or nanometer scales. In this study, nanocomposite electron beam (EB) organic resists are proved to be excellent candidates for electrically conductive and/or memory component materials for submicron or nanometer lateral-scale organic electronic devices. The memory and the resist patterning characteristics are investigated for a positive electron beam resist of ZEP520a containing [6,6]-phenyl-C61 butyric acid methyl ester (PCBM). Regarding the memory characteristics, good programming and excellent retention characteristics are obtained for electrons. The carrier transfer and retention mechanisms are also investigated. Regarding the resist patterning characteristics, it is found that line patterns (square patterns) of ZEP520a containing PCBM can be made with widths (side lengths) of less than 200 nm by using an extremely simple process with only EB exposures and developments. The distribution of PCBM molecules or their aggregations is also clarified in ZEP520a containing PCBM. The results of this study open the door to the simple fabrication of highly integrated flexible memories and electrical wires as well as of single-electron or quantum devices, including quantum information devices and sensitive biosensors for multiplexed and simultaneous diagnoses.