FULL DEPLETION SOI-TYPE SEMICONDUCTOR DEVICE AND INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide a full depletion SOI type semiconductor device, where a threshold voltage is controlled dynamically (changed). ;SOLUTION: (A) An insulating layer 14 formed on the semiconductor layer 11, (B) a semiconductor region 16A, which formed on the insulating layer 14, enclosed with an element separation region 15, (C) a source/drain region and channel formation region 24A formed in the semiconductor region 16A, (D) a body part 26A extended from the channel formation region 24A, (E) a gate electrode 21A, (F) a conductive region 30A formed, at least, from a region 12 of a semiconductor layer below the channel-forming region A to a part 13 of the semiconductor layer below the element separation region 15, (G) a first contact hole 32A connected to a part of the conductive region 30A which is below the element separation region 15, and (H) a second contact hole 28A connected to the body part 26A, are provided.;COPYRIGHT: (C)2001,JPO