Photoacoustic Nondestructive Quality Control of Microwelded Connection of Semiconductor Devices and Integrated Circuits

摘要

The results of photo acoustic quality control of microwelded connections of semiconductor devices are presented. A technique of the connection quality evaluation on the photoacoustic image contrast was proposed. The results of research have shown a possibility of the photoacoustic registration and visualization of delami-nations of upper layers on frequency up to 10 kHz, for which the upper layer is thermally thin. The computer analysis of photoacoustic image of connections allows evaluate their quality and reject semiconductor goods on principle "valid" -