首页> 外国专利> COMPOSITION FOR FORMATION OF SBTN FERROELECTRIC THIN FILM, AND METHOD FOR FORMATION OF SBTN FERROELECTRIC THIN FILM

COMPOSITION FOR FORMATION OF SBTN FERROELECTRIC THIN FILM, AND METHOD FOR FORMATION OF SBTN FERROELECTRIC THIN FILM

机译:SBTN铁电薄膜的形成组成及SBTN铁电薄膜的形成方法

摘要

PROBLEM TO BE SOLVED: To obtain a composition for formation of an SBTN ferroelectric thin film having an excellent shelf stability for a long term of period, and also to obtain a method for forming an SBTN ferroelectric thin film using the composition.;SOLUTION: The composition for formation of an SBTN ferroelectric thin film of a layered perovskite type contains an alkoxide of metals of Sr, Bi, Ta and Nb, its partial hydrolyzate, and/or organic acid salt. The composition contains particles having diameter sizes of 0.5 μm or more in 50 or less particles/mL. In the method for forming the SBTN ferroelectric thin film by coating the composition on a heat-resistive substrate, repeating a step of heating the substrate in the air, in an oxidizing atmosphere or in an atmosphere containing vapor until the film has a desired thickness, and sintering the film at a temperature of a crystallization temperature or more at least during heating in the final step or after the heating.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:获得用于形成在长期内具有优异的储存稳定性的SBTN铁电薄膜的组合物,并且还获得使用该组合物形成SBTN铁电薄膜的方法。用于形成层状钙钛矿型SBTN铁电薄膜的组合物包含Sr,Bi,Ta和Nb的金属的醇盐,其部分水解产物和/或有机酸盐。该组合物包含以50个或更少的颗粒/ mL具有0.5μm或更大的直径尺寸的颗粒。在通过将组合物涂覆在耐热基底上,重复在空气中,在氧化性气氛中或在包含蒸气的气氛中加热基底直到膜具有所需厚度的步骤来形成SBTN铁电薄膜的方法,并且至少在最后步骤中或在加热之后的加热过程中,在结晶温度或更高的温度下烧结膜。版权所有:(C)2000,JPO

著录项

  • 公开/公告号JP2000349080A

    专利类型

  • 公开/公告日2000-12-15

    原文格式PDF

  • 申请/专利权人 MITSUBISHI MATERIALS CORP;

    申请/专利号JP19990158119

  • 发明设计人 TSUCHIKIDA YOSHIHIKO;SOYAMA NOBUYUKI;

    申请日1999-06-04

  • 分类号H01L21/316;

  • 国家 JP

  • 入库时间 2022-08-22 01:27:09

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