COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION METHOD FOR FERROELECTRIC THIN FILM FORMATION AND FERROELECTRIC THIN FILM FORMED BY THE METHOD

摘要

PLZT, PZT, and PT with one species selected from the group consisting of a ferroelectric thin film formation to for, a composition for ferroelectric thin film formation of the present invention represented by the general formula (1): (Pb _x La _y ) (Zr _z Ti _(1-z) ) O ₃ (formula (1) of 0.9 x 1.3, 0 y 0.1, 0 z 0.9) in the composite metal oxide A represented by the complex oxide B, or the formula (2) C _n H _{2n + 1} COOH (However, 3 n 7) the carboxylic acid B is a liquid for forming a thin film which has a form of a blended mixture of a complex metal oxide represented by composition, and the composite oxide B can contain one or two or more selected from the group consisting of one or more, Sn, Sm, Nd and Y (yttrium) selected from the group consisting of Si, Ce and Bi, ;