National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan;
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan;
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan;
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan;
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan;
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan;
Department of Materials Engineering, The University of Tokyo, Tokyo, Japan;
Crystals; Films; Stress; Annealing; Hafnium compounds; Silicon;
机译:在770 k掺入薄Cu膜中的相变性和微观结构变化的实时观察
机译:用原子层等离子体处理诱导的纳米级ZrO2薄膜中的低温结晶和电铁电相变换
机译:HF0.5ZR0.5O2薄膜中的铁电:偏振切换现象和现场诱导的相变的微观研究
机译:HF-ZR-O铁电薄膜相变期间晶粒的微观结构变化
机译:多晶材料中微结构演化的理论和建模:溶质偏析,晶粒生长和相变。
机译:不同沉积条件下TINI形状记忆合金薄膜的晶粒尺寸和相变行为
机译:快速热退火工艺结晶SRBI2TA2O9薄膜的铁电和微观结构特征
机译:铁电薄膜和微晶玻璃的晶化和微观结构控制