首页> 外国专利> COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FERROELECTRIC THIN FILM FORMATION, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD

COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FERROELECTRIC THIN FILM FORMATION, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD

机译:铁电薄膜形成的组成,铁电薄膜形成的方法以及用该方法制成的铁电薄膜

摘要

PLZT, a ferroelectric thin film formation composition for forming the one type of the ferroelectric thin film selected from the group consisting of PZT, and PT is a general formula (1): (Pb x La y) (Zr z Ti (1-z)) O 3 (formula (1) of 0.9 x 1.3, 0 y 0.1, 0 z 0.9), the composite metal oxide A represented by a liquid composition for forming a thin film composite oxide B containing a P (phosphorus) is takes the form of a mixed mixed composite metal oxide, for forming the composite metal oxide A raw material and made of an organic metal compound solution is the raw material which is dissolved in an organic solvent in a ratio to give the metal atom ratio represented by the general formula (1) for constituting the composite oxide B. ;
机译:PLZT是用于形成选自PZT和PT的一种铁电薄膜的铁电薄膜形成组合物,其通式为(1):(Pb x La y)( Zr z Ti(1-z))O 3(式(1)为0.9

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号