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A bias stabilization circuit for a field-effect transistor comprising a monolithic microwave semiconductor integrated circuit and a compound semiconductor
A bias stabilization circuit for a field-effect transistor comprising a monolithic microwave semiconductor integrated circuit and a compound semiconductor
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机译:用于场效应晶体管的偏置稳定电路,其包括单片微波半导体集成电路和化合物半导体
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摘要
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a monolithic microwave semiconductor integrated circuit, and more particularly, to a bias control transistor composed of an enhancement mode compound semiconductor field effect transistor and a bias transistor composed of an enhancement mode compound semiconductor field effect transistor And a bias stabilization circuit of a current mirror system configured.
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