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A bias stabilization circuit for a field-effect transistor comprising a monolithic microwave semiconductor integrated circuit and a compound semiconductor

机译:用于场效应晶体管的偏置稳定电路,其包括单片微波半导体集成电路和化合物半导体

摘要

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a monolithic microwave semiconductor integrated circuit, and more particularly, to a bias control transistor composed of an enhancement mode compound semiconductor field effect transistor and a bias transistor composed of an enhancement mode compound semiconductor field effect transistor And a bias stabilization circuit of a current mirror system configured.
机译:偏置控制晶体管和偏置晶体管技术领域本发明涉及一种单片微波半导体集成电路,更具体地,涉及一种由增强模式化合物半导体场效应晶体管组成的偏置控制晶体管和一种由增强模式组成的偏置晶体管。化合物半导体场效应晶体管和偏置稳定电路构成的电流镜系统。

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