Method for farbricating field-effect transistors in integrated semiconductor circuits and integrated semiconductor circuit fabricated with a field-effect transistor of this type

摘要

A method for fabricating a field-effect transistor situated within an integrated semiconductor circuit. At least two gate regions each extending between a source region and a drain region and are disposed such that they lie one above the other in a thickness direction of a substrate, thereby reducing the space requirement of the hitherto customary larger field-effect transistors in integrated semiconductor circuits.