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Bias stabilization circuit of field effect transistor consisting of monolithic microwave semiconductor integrated circuit and compound semiconductor

机译:由单片微波半导体集成电路和化合物半导体组成的场效应晶体管的偏置稳定电路

摘要

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a monolithic microwave semiconductor integrated circuit comprising a bias control transistor comprising a compound semiconductor field effect transistor in an enhancement mode and a compound semiconductor field effect transistor in an enhancement mode. A bias stabilization circuit of the configured current mirror system is provided.
机译:整体式微波半导体集成电路技术领域本发明涉及一种整体式微波半导体集成电路,其包括偏置控制晶体管,该偏置控制晶体管包括处于增强模式的化合物半导体场效应晶体管和处于增强模式的化合物半导体场效应晶体管。提供了所配置的电流镜系统的偏置稳定电路。

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