METHOD FOR FORMING SHALLOW JUNCTIONS BY ION IMPLANTATION IN SILICON WAFERS

摘要

A method for ion implantation into a silicon semiconducting wafer with a buried barrier layer includes the implantation of dopant ions at a low energy level into the substrate to a depth close to the surface. Other ions are implanted at a high energy level into the substrate to form a network of extended defects at a depth beyond the barrier layer. The implanted substrate is subjected to rapid thermal annealing to activate the dopants to form a shallow conducting layer close to the wafer surface.