A STUDY OF SILICON AVALANCHE COLD MICRO-CATHODE USING ULTRA-SHALLOW PN+ JUNCTION

摘要

The structure, fabrication and emission characteristics of a silicon cold micro-cathode using ultra-shallow PN+ junction are presented. Implantation of As+ with a energy around 12 kev, rapid thermal annealing combined with argon sputtering are used for forming ultra-shallow pn+ junction, whose depth is lower than 30nm. In a vacuum system Ⅰ-Ⅴcharacteristics were measured. The stability problem which was found in the devices testing is also discussed in this paper.