Semiconductor integrated circuit device having a leakage current cutoff circuit, constructed using MT-CMOS, for reducing standby leakage current

摘要

A semiconductor integrated circuit device has a high-threshold N-channel type MIS field effect transistor and a load circuit. The high-threshold N-channel type MIS field effect transistor is connected between a real high-potential power supply line and a pseudo high-potential power supply line. The load circuit has a low-threshold P-channel type MIS field effect transistor and a low-threshold N-channel type MIS field effect transistor. A first power supply terminal of the load circuit is connected to the pseudo high-potential power supply line, and a second power supply terminal of the load circuit is connected to a real low-potential power supply line.