PLASMA ENHANCED CHEMICAL VAPOR DEPOSITED (PECVD) SILICON NITRIDE BARRIER LAYER FOR HIGH DENSITY PLASMA CHEMICAL VAPOR DEPOSITED (HDP-CVD) DIELECTRIC LAYER

摘要

A method for forming a dielectric layer within a microelectronics fabrication.There is first provided a substrate. There is then formed over the substrate a polysilicon resistor.There is then formed over the polysilicon resistor a first dielectric layer formed of a silicon nitridedielectric material deposited employing a plasma enhanced chemical vapor deposition (PECVD)method other than a high density plasma chemical vapor deposition (HDP-CVD) method. Finally,there is then formed over the first dielectric layer a second dielectric layer deposited employing ahigh density plasma chemical vapor deposition (HDP-CVD) method, where first dielectric layerattenuates a decrease in resistance of the polysilicon resistor incident to forming the seconddielectric layer over the first dielectric layer.