Method for enhancing line-to-line capacitance uniformity of plasma enhanced chemical vapor deposited (PECVD) inter-metal dielectric (IMD) layers

摘要

A method for forming a dielectric layer. There is first provided a substrate. There is then formed over the substrate a patterned conductor layer. There is then formed upon the patterned conductor layer, while employing a plasma enhanced chemical vapor deposition (PECVD) method, a silicon containing dielectric layer, wherein when forming the silicon containing dielectric layer there is controlled a temperature of the substrate so that there is enhanced a line-to-line capacitance uniformity of the patterned conductor layer.