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Modeling of plasma-enhanced chemical vapor deposited silicon nitride thin films into confined geometries

机译：将等离子体增强化学气相沉积的氮化硅薄膜建模为有限的几何形状

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作者
Spence, Ronald James;
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作者单位

University of Arkansas;

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授予单位 University of Arkansas;
学科
学位 Ph.D.
年度 1993
页码 250 p.
总页数 250
原文格式 PDF
正文语种 eng
中图分类
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Modeling of plasma-enhanced chemical vapor deposited silicon nitride thin films into confined geometries

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