首页> 外文会议>International Conference on Photovoltaic Science and Technologies >Optimization of Silicon Nitride (SiNX) Anti-Reflective Coating (ARC) and Passivation Layers Using Industrial Plasma Enhanced Chemical Vapor Deposition (PECVD) for PERC Type Solar Cells
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Optimization of Silicon Nitride (SiNX) Anti-Reflective Coating (ARC) and Passivation Layers Using Industrial Plasma Enhanced Chemical Vapor Deposition (PECVD) for PERC Type Solar Cells

机译:利用工业等离子体增强化学气相沉积(PECVD)的氮化硅(SIN X / INM>)抗反射涂层(ARC)和钝化层的优化用于PERC型太阳能电池

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This study focuses on optimization of silicon nitride (SiNX) Anti Reflective Coating (ARC) layer deposited on the front side of industrial Passivated Emitter and Rear Cell (PERC) type solar cells in an industrial tube type plasma enhanced chemical vapor deposition (PECVD) tool. Reflection and thickness optimization studies of ARC layer was carried out through a matrix composed of critical plasma parameters. Characterization of the layers were conducted via ellipsometry and reflectivity measurements for uniform coating with desired thickness and refractive index throughout the boat and within the wafers. Passivation property of our films was also tested through QSSPC lifetime measurements.
机译:本研究侧重于氮化硅优化(SIN x )沉积在工业管式等离子体增强化学气相沉积(PECVD)工具的工业钝化发射器和后电池(PERC)型太阳能电池的前侧的抗反射涂层(弧形)层。通过由临界等离子体参数组成的基质进行电弧层的反射和厚度优化研究。通过椭圆形测定法和反射率测量来进行层的表征,并在整个船内具有所需厚度和折射率的均匀涂层和晶片内的折射率进行。我们的电影的钝化性也通过QSSPC寿命测量进行了测试。

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