METHOD FOR FORMING GATE SPACER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a gate spacer of a semiconductor device is provided to minimize the damage of a gate spacer by using two-step etching mixed of dry and wet etching. CONSTITUTION: A gate oxide layer(24) is formed on a substrate(20) with an isolation layer(22). Gate lines(26) including a gate poly layer(26a), a gate silicide layer(26b) and a gate cap layer(26c) are formed on the gate oxide layer. The first and second hard masks(27,28) are sequentially formed on the gate lines. A gate spacer(29a) is formed at both sidewalls of the gate line and the first and second hard masks by depositing a nitride layer and two-step etching using dry and wet etching.