METHOD OF FORMING GATE SPACER OF SEMICONDUCTOR DEVICE TO SECURE LINE WIDTH OF GATE SPACER AND INCREASE UNIFORMITY TO SUBSTRATE LOSS

摘要

Purpose: a kind of method for the gate spacer being used to form semiconductor device is arranged to increase uniformity to the substrate loss of the cumulative etch selectivity by a nitride layer, white layer in the method for etching one second oxidation film. Construction: providing semi-conductive substrate (21), has one (25). One first oxide layer, a nitride layer, white layer and one second oxidation film are sequentially deposited on a semiconductor substrate, have door. First gasket (29) is formed by etching the second oxidation film. It is etched by using the first gasket as a mask, nitride layer, white layer and the first oxide layer. Second gasket (30) and third gasket (31) are formed by etching nitride layer, white layer and the first oxide layer.