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Non-volatile semiconductor memory device in which selection gate transistors and memory cells have different structures
Non-volatile semiconductor memory device in which selection gate transistors and memory cells have different structures
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机译:选择栅晶体管和存储单元具有不同结构的非易失性半导体存储器件
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摘要
A non-volatile semiconductor memory device is disclosed, which comprises a memory cell unit including at least one memory cell transistor formed on a semiconductor substrate and having a laminated structure of a charge accumulation layer and a control gate layer, and a selection gate transistor one of the source/drain diffusion layer regions of which is connected to a bit line or a source line and the other of the the source/drain diffusion layer regions of which is connected to the memory cell unit. The shape of the source diffusion layer region of the selection gate transistor is asymmetical to the shape of the drain diffusion layer region thereof below the selection gate transistor.
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