Quantum Dot Floating Gate Transistor with Multi-wall Carbon Nano Tube Channel for Non-volatile Memory Devices

摘要

As the CMOS devices are scaled down to nano domain and below, semiconductor fabrication technology leads to design of nano electronic devices that make use of different types of nano particles, materials and the corresponding properties. Several emerging devices such as Single Electron transistors, Quantum dot transistors, carbon nano tube Field effect transistors are shown to have potential of taking place in post Silicon era. As the device size is coming down, gate lengths are reduced, and the corresponding reduction of oxide thickness results in unwanted effects such as reduced threshold voltages, higher offset currents, reduced control of the gate over transistor characteristics has been observed. This leads to the inability of the non-volatile memory device to hold the threshold level it is expected to sustain over long periods of time without electrical power being applied. In this paper the author proposed a design of Quantum dot floating gate transistor with Carbon nano tube channel for non-volatile memory devices. Carbon nano tube field effect transistors are promising nano-scaled devices for implementing high performance, very dense and low power circuits. Because the carbon nano tube is very small and therefore only needs small amounts of charge held by its capacitance to appreciably change the device's threshold voltage, the dielectric can be made thick, so as to avoid present day scaling issues.