Floating-gated memory based on carbon nanotube field-effect transistors with Si floating dots

摘要

We have fabricated a carbon nanotube field-effect transistor (CNTFET)-based nonvolatile memory device with Si floating dots. The electrical characteristics of this memory device were compared with those of devices with a HfO_2 charge storage layer or Au floating dots. For a sweep width of 6 V, the memory window of the devices with the Si floating dots increased twofold as compared with that of the devices with the HfO_2 layer. Moreover, the retention characteristics revealed that, for the device with the Au floating dots, the off-state had almost the same current as the on-state at the 400th s. However, the devices with the Si floating dots had longer-retention characteristics. The results indicate that CNTFET-based devices with Si floating dots are promising candidates for low-power consumption nonvolatile memory devices.