Transistor for non volatile memory devices having a carbon nanotube channel and electrically floating quantum dots in its gate dielectric

摘要

A transistor is described having a source electrode and a drain electrode. The transistor has at least one semiconducting carbon nanotube that is electrically coupled between the source and drain electrodes. The transistor has a gate electrode and dielectric material containing one or more quantum dots between the carbon nanotube and the gate electrode.