Electrical bistabilities and operating mechanisms of memory devices fabricated utilizing ZnO quantum dot—multi-walled carbon nanotube nanocomposites

摘要

Transmission electron microscopy images showed that the ZnO quantum dots (QDs) were conjugated with multi-walled carbon nanotubes (MWCNTs). Bistable memories utilizing an ensemble of the ZnO QD–MWCNT heterostructures were developed and the storage capability of the devices was significantly enhanced due to the conjugation of the ZnO QDs and the MWCNTs. Operating mechanisms of memory devices fabricated utilizing the ZnO QD–MWCNT heterostructures are described on the basis of the current–voltage results. The memory devices exhibited excellent environmental stability at ambient conditions.