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Electrical bistabilities and memory mechanisms of organic bistable devices based on colloidal ZnO quantum dot-polymethylmethacrylate polymer nanocomposites

机译:基于胶体ZnO量子点-聚甲基丙烯酸甲酯聚合物纳米复合材料的有机双稳态器件的电双稳态和记忆机理

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摘要

Transmission electron microscopy images showed that colloidal ZnO quantum dots (QDs) were distributed around the surface of a polymethylmethacrylate (PMMA) polymer. Current-voltage (I-V) measurements on the Al/colloidal ZnO QDs blended with PMMA polymer layer/ indium-tin-oxide/glass devices at 300 K showed a current bistability. The maximum ON/OFF ratio of the current bistability for the organic bistable devices (OBDs) was as large as 5 × 10~4, and the cycling endurance time of the ON/OFF switching for the OBDs was above 10~5. The memory mechanisms of the fabricated OBDs are described on the basis of the I-V results.
机译:透射电子显微镜图像显示,胶体ZnO量子点(QD)分布在聚甲基丙烯酸甲酯(PMMA)聚合物的表面周围。在掺有PMMA聚合物层/氧化铟锡/玻璃器件的Al /胶体ZnO QD上以300 K的电流-电压(I-V)测量显示出电流双稳性。有机双稳态器件(OBD)的双稳态电流的最大ON / OFF比值高达5×10〜4,OBD的ON / OFF开关的循环耐久时间大于10〜5。基于I-V结果来描述所制造的OBD的存储机制。

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  • 来源
    《Applied Physicsletters》 |2009年第13期|78-80|共3页
  • 作者单位

    Department of Information Display Engineering, National Research Laboratory for Nano Quantum Electronics, and Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea;

    Department of Information Display Engineering, National Research Laboratory for Nano Quantum Electronics, and Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea;

    Department of Information Display Engineering, National Research Laboratory for Nano Quantum Electronics, and Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea;

    Department of Information Display Engineering, National Research Laboratory for Nano Quantum Electronics, and Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea;

    Department of Information Display Engineering, National Research Laboratory for Nano Quantum Electronics, and Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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