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Electrical bistabilities and memory mechanisms of nonvolatile organic bistable devices based on exfoliated muscovite-type mica nanoparticle/poly(methylmethacrylate) nanocomposites

机译:基于剥离型白云母型云母/聚甲基丙烯酸甲酯纳米复合材料的非易失性有机双稳态器件的电双稳态和记忆机理

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摘要

Organic bistable devices (OBDs) with exfoliated mica nanoparticles (NPs) embedded into an insulating poly(methylmethacrylate) (PMMA) layer were fabricated by using a spin-coating method. Current-voltage (I-V) curves for the Al/PMMA/exfoliated mica NP/PMMA/indium-tin-oxide/glass devices at 300 K showed a clockwise current hysteresis behavior due to the existence of the exfoliated muscovite-type mica NPs, which is an essential feature for bistable devices. Write-read-erase-read data showed that the OBDs had rewritable nonvolatile memories and an endurance number of ON/OFF switching for the OBDs of 10(2) cycles. An ON/OFF ratio of 1 x 10(3) was maintained for retention times larger than 1 x 10(4) s. The memory mechanisms of the fabricated OBDs were described by using the trapping and the tunneling processes within a PMMA active layer containing exfoliated muscovite-type mica NPs on the basis of the energy band diagram and the I-V curves. (C) 2017 Elsevier B.V. All rights reserved.
机译:使用旋涂法制造了将片状云母纳米颗粒(NPs)嵌入绝缘的聚甲基丙烯酸甲酯(PMMA)层中的有机双稳态器件(OBD)。 Al / PMMA /片状云母NP / PMMA /铟锡氧化物/玻璃器件在300 K时的电流-电压(IV)曲线由于存在片状白云母型NPs的存在而表现出顺时针方向的电流滞后行为。是双稳态设备的基本功能。读写读写数据表明,OBD具有可擦写的非易失性存储器,并且OBD的ON / OFF切换耐久数为10(2)个周期。对于大于1 x 10(4)s的保留时间,保持ON / OFF比为1 x 10(3)。基于能带图和I-V曲线,通过在包含剥落的白云母型云母NPs的PMMA活性层内使用俘获和隧穿工艺来描述所制造的OBD的存储机理。 (C)2017 Elsevier B.V.保留所有权利。

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