Substrate for manufacturing a semiconductor device with three element alloy

摘要

The substrate according to the present invention is comprised of a silver/gold/grain element alloy layer, wherein the alloy forms an outside layer of the product. The grain element is selected from the group consisting of selenium (Se), antimony (Sb), bismuth (Bi), nickel (Ni), cobalt (Co) and indium (In) or a combination thereof. The present invention has a particular application in forming the outside layer of various items, including a lead frame, a ball grid array, a header, a printed circuit board, a reed switch and a connector.