A method for manufacturing a base substrate for a semiconductor element, a method for manufacturing a semiconductor element, a base substrate for a semiconductor element, an epitaxial substrate for a semiconductor element, and a semiconductor element.

摘要

PROBLEM TO BE SOLVED: To provide a base substrate capable of realizing a semiconductor element having excellent characteristics and a semiconductor element using the substrate. SOLUTION: A method for manufacturing a base substrate for a semiconductor element is a single crystal acquisition step of obtaining a plate-shaped Zn-doped GaN single crystal and forming an ashing damage layer on at least one main surface of the plate-shaped Zn-doped GaN single crystal. A damage layer forming step is provided, and in the damage layer forming step, a band when a He-Cd laser having an excitation wavelength of 325 nm is irradiated on one main surface at an excitation intensity of 800 W / cm2 to perform photoluminescence measurement. The ashing damage layer is formed by laser ashing one of the main surfaces so that the ratio of the luminescence intensity of the luminescence on the longer wavelength side than the band end to the luminescence intensity of the edge luminescence is 10% or more. [Selection diagram] Fig. 1