首页> 外国专利> WAFER, METHOD OF MANUFACTURING TEMPLATE SUBSTRATE FOR SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT SUBSTRATE, TEMPLATE SUBSTRATE FOR SEMICONDUCTOR LIGHT-EMITTING ELEMENT, SEMICONDUCTOR LIGHT-EMITTING ELEMENT SUBSTRATE, AND RESIST COATING METHOD

WAFER, METHOD OF MANUFACTURING TEMPLATE SUBSTRATE FOR SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT SUBSTRATE, TEMPLATE SUBSTRATE FOR SEMICONDUCTOR LIGHT-EMITTING ELEMENT, SEMICONDUCTOR LIGHT-EMITTING ELEMENT SUBSTRATE, AND RESIST COATING METHOD

机译:晶片,制造用于半导体发光元件的模板基板的方法,制造半导体发光元件的方法,制造半导体发光元件的方法,用于导电的导体的基板,导电的基板抗蚀剂涂装方法

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor light-emitting element which prevents deterioration in patterning accuracy during formation of a resist pattern on a wafer surface to have excellent light extraction efficiency.;SOLUTION: A wafer 10 is used as a semiconductor light-emitting element substrate and comprises: in a thin disc-shaped body thereof, an circular arc-shaped outer peripheral portion 11; and a linear flat portion 12 formed at a part of the outer peripheral portion 11. The wafer forms an angle α of 164° or more between the linear flat portion 12 and a tangent line 13 at a joint A between the outer peripheral portion 11 and the flat portion 12.;COPYRIGHT: (C)2012,JPO&INPIT
机译:解决的问题:为了获得一种半导体发光元件,该半导体发光元件防止在晶片表面上形成抗蚀剂图案期间的图案形成精度的劣化,从而具有优异的光提取效率。解决方案:晶片10被用作半导体发光元件。元件基板,在其薄盘状的主体中具有圆弧状的外周部11。晶片在外周部11的一部分上形成有直线状的平坦部12。晶片在直线状的平坦部12与外周部11之间的接缝A处的切线13之间形成164°以上的角度α。扁平部分12 .;版权:(C)2012,JPO&INPIT

著录项

  • 公开/公告号JP2012054292A

    专利类型

  • 公开/公告日2012-03-15

    原文格式PDF

  • 申请/专利权人 SHOWA DENKO KK;

    申请/专利号JP20100193750

  • 发明设计人 KAMEI KOJI;

    申请日2010-08-31

  • 分类号H01L33/32;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-21 17:42:14

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