non-volatile MRAM cell and operating methode thereof, and ultra-high large scale integrated multi-radix MRAM using non-volatile MRAM cell

摘要

PURPOSE: A nonvolatile magnetic memory cell, its operation method and ultra-high large scale integrated multi-radix MRAM using non-volatile MRAM cell are provided, which localizes a magnetic field to adjust magnetic interference between cells or a magnetization direction of a magnetic layer. CONSTITUTION: A unit cell(30) comprises a pinned layer(31) having an exchange bias. The unit cell comprises the first free layer(301), a conductive layer or an insulator layer(302), the first pinned layer(303), an antiferromagnetic layer(304), the second pinned layer(305), a conductive layer of an insulator layer(306) and the second free layer(307). The pinned layer(31) comprises the first pinned layer and the antiferromagnetic layer and the second pinned layer, and has an anti-parallel exchange bias, and thus the magnetization direction of the antiferromagnetic layers(303,305) are opposite each other.