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Erasing and Programming methods of a flash memory device for increasing program speed of the flash memory device
Erasing and Programming methods of a flash memory device for increasing program speed of the flash memory device
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机译:用于提高闪存设备的编程速度的闪存设备的擦除和编程方法
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摘要
Erase and program methods of a flash memory device including MLCs for increasing the program speed are described. In the erase method, MLCs are pre-programmed so that a voltage range in which threshold voltages of MLCs are distributed can be reduced. Therefore, a fail occurrence ratio can be reduced when erasing MLCs, the threshold voltage distribution of MLCs can be improved and an overall program time can be shortened in a subsequent program operation.
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