Improvement on programming and erasing speeds for charge-trapping flash memory device with SiGe buried channel

摘要

SiGe buried channel with different Ge contents and various thicknesses of Si-cap layer on operation characteristics of charge-trapping (CT) flash devices were studied in this work. The programming and erasing speeds of CT flash devices are significantly improved by employing SiGe buried channel. The retention properties of CT flash devices are satisfactory with suitable Ge content in SiGe buried channel and thickness of Si-cap layer.