Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel

摘要

The operation characteristics of p-channel $hbox{TaN/}breakhbox{Al}_{2}hbox{O}_{3}/hbox{HfO}_{2}/hbox{HfAlO}_{2}/hbox{SiO}_{2}/hbox{Si}$ MAHOS-type nonvolatile memory devices with different Ge contents in a SiGe buried channel are investigated in this letter. Compared with those of a device having a conventional Si-channel, both programming and erasing speeds are significantly improved by employing a $hbox{Si}_{0.7}hbox{Ge}_{0.3}$ buried channel. Satisfactory retention and excellent endurance characteristics up to $hbox{10}^{6} hbox{P/E cycles}$ with 4.1-V memory window show that the degradation on reliability properties, if it exists, is negligible when the SiGe buried channel is introduced.