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Method of programming and erasing a p-channel BE-SONOS NAND flash memory
Method of programming and erasing a p-channel BE-SONOS NAND flash memory
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机译:编程和擦除p沟道BE-SONOS NAND闪存的方法
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摘要
A programming method for a p-channel memory cell, the memory cell includes a source, a drain and a gate. The gate is applies with a first voltage, which results in Fowler-Nordheim (−FN) hole injection, thereby causing the memory cell to be in a programmed state.
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