METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, ELECTRONIC APPARATUS, SEMICONDUCTOR MANUFACTURING APPARATUS, AND STORAGE MEDIUM

摘要

PPROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can deposit a barrier film on an exposed face of an insulating interlayer where a concave portion on a substrate is formed, form a barrier film that is favorable in step coating performance in the case of forming copper wiring electrically connected with metal wiring on the lower layer side in the concave portion, and suppress an increase of wiring resistance. PSOLUTION: An oxide film on a surface of copper wiring 13 on the lower layer side exposed at the bottom face of a concave portion 21 which is formed at an insulating interlayer is reduced or etched, and the oxygen of the surface of the copper wiring 13 is removed. After that, an organic metallic compound including manganese but not including oxygen is supplied, and accordingly, a manganese oxide 25 serving as a self-forming barrier film is selectively generated at a portion including oxygen of side walls of the concave portion 21 and surfaces of the insulating interlayer, and at the same time, the manganese oxide 25 is not generated on the surface of the copper wiring 13, and then copper is embedded in the concave portion. PCOPYRIGHT: (C)2009,JPO&INPIT