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Asymetrical Field-Effect Semiconductor Device with Sti Region

机译：具有Sti区的非对称场效应半导体器件

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摘要

A high voltage asymmetric semiconductor device (20) that includes a shallow trench isolation (STI) region (22) that forms a dielectric between a drain (34) and a gate (36) to allow for high voltage operation, wherein the STI region includes a lower corner (24) that is shaped, e.g. rounded, to reduce an impact ionization rate. Exemplarity the shaped corner terminates on a (111) crystalline plane facet.

机译：一种高压非对称半导体器件（ 20 ），该器件包括浅沟槽隔离（STI）区域（ 22 ），该区域在漏极（ 34 ）和栅极（ 36 ）以允许进行高压操作，其中STI区域包括下角（ 24 ），该下角的形状例如为四舍五入，以降低碰撞电离率。例如，异形的角终止于（111）晶面。 展开▼

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公开/公告号US2008303092A1

专利类型

公开/公告日2008-12-11

原文格式PDF

申请/专利权人 THEODORE JAMES LETAVIC;
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申请/专利号US20060158105

发明设计人 THEODORE JAMES LETAVIC;
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申请日2006-12-11

分类号H01L29/00;H01L21/336;

国家 US

入库时间 2022-08-21 19:35:37

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