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Field-Effect Devices: Molecular Crystal Engineering: Tuning Organic Semiconductor from p-type to n-type by Adjusting Their Substitutional Symmetry (Adv. Mater. 10/2017)

机译：现场效应装置：分子晶体工程：通过调整其替代对称（ADV。Mater。10/2017）从p型从p型调整有机半导体。

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Hui Jiang; Peng Hu; Jun Ye; Yongxin Li; Henan Li; Xiaotao Zhang; Rongjin Li; Huanli Dong; Wenping Hu; Christian Kloc;
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1. Molecular Crystal Engineering: Tuning Organic Semiconductor from p-type to n-type by Adjusting Their Substitutional Symmetry [J] . Jiang Hui, Hu Peng, Ye Jun, Advanced Materials . 2017,第10期

机译：分子晶体工程：通过调整取代对称性将有机半导体从p型转变为n型
2. Improving device performance of n-type organic field-effect transistors via doping with a p-type organic semiconductor [J] . Lan Shuqiong, Yan Yujie, Yang Huihuang, Journal of Materials Chemistry, C. materials for optical and electronic devices . 2019,第15期

机译：通过用P型有机半导体掺杂提高N型有机场效应晶体管的装置性能
3. Semiconductors: High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers (Adv. Sci. 8/2017) [J] . Derek E. Lee, Wei Huang, Peng Zhang, Advanced Science . 2017,第8期

机译：半导体：基于并五苯/ P13 /并五苯的有机半导体异质结构作为电荷传输层和陷阱层的高性能非易失性有机场效应晶体管存储器（Adv。Sci。8/2017）
4. P-type and N-type oligothiophene-based semiconductors as active layers in organic field-effect transistors. [D] . Mushrush, Melissa Ann. 2003

机译：P型和N型低聚噻吩基半导体作为有机场效应晶体管中的有源层。
5. Low-voltage High-performance Organic Field-Effect Transistors Based on 2D Crystalline Molecular Semiconductors [O] . Qijing Wang, Sai Jiang, Jun Qian, -1

机译：基于二维晶体分子半导体的低压高性能有机场效应晶体管
6. Polyelectrolytes: Improved Performance in n-Type Organic Field-Effect Transistors via Polyelectrolyte-Mediated Interfacial Doping (Adv. Electron. Mater. 10/2017) [O] . Yu Jung Park, Myoung Joo Cha, Yung Jin Yoon, 2017

机译：聚电解质：通过聚电解质介导的界面掺杂（ADV。电子。Matter。10/2017）改善了N型有机场效应晶体管的性能。

Field-Effect Devices: Molecular Crystal Engineering: Tuning Organic Semiconductor from p-type to n-type by Adjusting Their Substitutional Symmetry (Adv. Mater. 10/2017)

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