METHOD OF FORMING SILICON NITRIDE AT LOW TEMPERATURE, CHARGE TRAP MEMORY DEVICE COMPRISING CRYSTALLINE NANO DOTS FORMED USING THE SAME AND METHOD OF MANUFACTURING CHARGE TRAP MEMORY DEVICE

摘要

Even if the thickness of nitride film be it is thin, a method of for forming silicon nitride in low temperature, the charge trap memory device of nano dot of the crystallization of the forming of the identical and method including using manufacture charge trap memory device is arranged to prevent the increment of leakage current. Substrate is loaded into the room of nitride deposition device (100). Nitride deposition device includes a filament. The temperature of filament increases to the dissociation temperature of propulsive gas (110). Propulsive gas is supplied to room (120) for silicon nitride formation. Therefore, crystal silicon nitride is formed in the top of substrate. It is maintained at this point, the temperature of filament is maintained in quantity support~tens of supports by 1400 degree Celsius of -2000 deg. C Pressure of room.