METHOD OF FORMING NANO DOT, METHOD OF FABRICATING MEMORY DEVICE INCLUDING NANO DOT, CHARGE TRAP LAYER INCLUDING NANO DOT, AND MEMORY DEVICE INCLUDING IT

摘要

PPROBLEM TO BE SOLVED: To provide: a method of forming nano dots; a method of fabricating a memory device including the nano dots; a charge trap layer including the nano dots; and a memory device including the charge trap. PSOLUTION: The method of forming the nano dots include a first step for forming cores, a second step for coating the surfaces of the cores with a polymer, and a third step for forming graphene layers covering the surfaces of the cores by thermally treating the cores coated with the polymer. The cores may be removed after the third step. The surfaces of the cores may be coated with a graphitization catalyst material before coating the surfaces of the cores with the polymer. Also, the cores contain a charge trap and metal particles having a function as a graphitization catalyst, or may contain metal particles having a charge trapping function. PCOPYRIGHT: (C)2009,JPO&INPIT