GAN-BASED LIGHT EMITTING DIODE HAVING OMNIDIRECTIONAL REFLECTOR WITH 3-DIMENSIONAL STRUCTURE AND METHOD FOR FABRICATING THE SAME

摘要

The present invention forms a patterning process or re-growth (regrowth) without omnidirectional reflectors , such as the etching process of the request thereby relates to a nitride-based light emitting device and a method of manufacturing the omnidirectional reflector having a three-dimensional structure that can improve the light extraction efficiency of the light emitting device , comprising an omnidirectional reflector having a three-dimensional structure according to the present invention a nitride-based light-emitting device includes a substrate , and provided on the substrate , the nitride-based semiconductor layer that is provided on a substrate , including an omnidirectional reflector , and the omnidirectional reflectors are configured to include the three-dimensional structure including a quantum dot formed is characterized in that , including The .