机译:使用网状GaN / SiO_2 / Al全向反射器提高GaN基紫外发光二极管的光输出功率
Department of Nanophotonics, Korea University, Seoul, South Korea;
Department of Nanophotonics, Korea University, Seoul, South Korea;
Department of Nanophotonics, Korea University, Seoul, South Korea,LED Division, LG Innotek Co. Ltd, Paju, Gyeonggi-do, South Korea;
LED Division, LG Innotek Co. Ltd, Paju, Gyeonggi-do, South Korea;
Department of Applied Physics, Kyung Hee University, Gyeonggi-do, South Korea;
Department of Applied Physics, Kyung Hee University, Gyeonggi-do, South Korea;
Department of Nanophotonics, Korea University, Seoul, South Korea,Department of Materials Science and Engineering, Korea University, Seoul 02841, South Korea;
aluminum; GaN; light extraction; light-emitting diodes; omnidirectional reflectors; SiO_2;
机译:具有TiO_2 / SiO_2反射镜和粗糙的GaO_x表面膜的垂直结构的GaN基发光二极管的增强的光输出
机译:台面侧壁涂有SiO_2 / TiO_2分布布拉格反射器的GaN基倒装芯片发光二极管的光输出增强
机译:通过使用SiO_2锥提高GaN基发光二极管的光输出功率
机译:通过使用AGPDCU反射器改善紫外线发光二极管的光输出功率
机译:GaN基发光二极管上的光学功能结构,用于提高光提取效率和控制发射模式。
机译:微米级圆锥阵列图案化的具有三维背面反射镜的基于GaN的发光二极管的光输出增强
机译:利用双光子准晶体模式提高GaN基发光二极管的光输出功率
机译:具有全向反射器的紫外光谱发光二极管具有高提取效率